High-resolution damage depth profiles of unannealed sub-100 nm B+ implants in (100) silicon

被引:7
作者
Hartford, CL [1 ]
Hillard, RJ
Mazur, RG
Foad, MA
机构
[1] Solid State Measurements Inc, Pittsburgh, PA 15275 USA
[2] Appl Mat Implant Div, Horsham RH13 5PY, W Sussex, England
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1998年 / 16卷 / 01期
关键词
D O I
10.1116/1.589803
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Si (100) wafers were boron implanted using an xRLEAP ion implanter at energies of 0.2, 1.0, and 3.0 keV all at a dose of 1 x 10(14) cm(-2). Advanced spreading resistance (SR) measurements were performed on the as-implanted samples to obtain high-resolution profiles of the damaged layer produced during implantation. The measured spreading resistance was highest at, or near, the surface on all samples. The 1.0 and 3.0 keV implants also showed minima in the SR near the substrate. The as-implanted samples were examined with secondary ion mass spectrometry to determine the dopant profile. Forward and reverse Schottky I-V measurements were also done on the same as-implanted samples with a mercury probe. The forward Schottky I-V curves for the 0.2 and 1.0 keV samples showed nonideal Schottky diode behavior. The 3.0 keV sample was similar to that of a good quality Schottky diode and had an ideality factor of 1.28. The reverse Schottky I-V data were processed to obtain the effective dielectric constants for each sample; a neutron transmutation-doped (NTD) wafer was used as a reference. The dielectric constants were 0.77, 1.467, 2.797, and 10.26 for the 0.2, 1.0, and 3.0 keV and NTD samples, respectively. (C) 1998 American Vacuum Society.
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收藏
页码:316 / 319
页数:4
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