ULTRA LOW-ENERGY (100-2000 EV) BORON IMPLANTATION INTO CRYSTALLINE AND SILICON-PREAMORPHIZED SILICON

被引：26

作者：

BOUSETTA, A ^{[1
]}

VANDENBERG, JA ^{[1
]}

VALIZADEH, R ^{[1
]}

ARMOUR, DG ^{[1
]}

ZALM, PC ^{[1
]}

机构：

[1] PHILIPS RES LABS,5600 JA EINDHOVEN,NETHERLANDS

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1991年 / 55卷 / 1-4期

关键词：

D O I：

10.1016/0168-583X(91)96231-9

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Very low energy (< 1 keV) B+ ion implantation has been carried out on both crystalline and silicon-preamorphized silicon. The amorphous layer depth was determined using Rutherford backscattering analysis (RBS). The penetration depth and channelling tail of B+ ions into silicon was studied as a function of ion energy (100-200 eV) and low temperature regrowth/annealing (T < 600-degrees-C), using secondary ion mass spectroscopy (SIMS). These studies also involved low energy (40-60 eV) ion beam deposition (IBD) of 10-20 nm isotopic Si-28+ cap layer at room temperature to enable accurate SIMS depth profile measurements to be carried out. The results show the extent of the channelling tails at these low energies and indicate that sub 40 nm p+ -n junctions with estimated carrier concentrations as high as 10(20) cm-3 can be obtained.

引用

页码：565 / 568

页数：4

共 24 条

[1] ELIMINATION OF END-OF-RANGE AND MASK EDGE LATERAL DAMAGE IN GE+ PREAMORPHIZED, B+ IMPLANTED SI [J].