CuIn1-xGaxSe2-based photovoltaic cells from electrodeposited precursor films

被引：75

作者：

Bhattacharya, RN ^{[1
]}

Fernandez, AM ^{[1
]}

机构：

[1] Natl Renewable Energy Lab, Golden, CO 80401 USA

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2003年 / 76卷 / 03期

关键词：

electrodeposition; Cu(In; Ga)Se-2; photovoltaic cell; buffer solution;

D O I：

10.1016/S0927-0248(02)00285-4

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

We have developed an electrodeposition bath based on a buffer solution so that the stability of the electrodeposition process is enhanced and no metal oxides or hydroxides precipitate out of solution. The buffer-solution-based bath also deposits more gallium in the precursor films. As-deposited precursors are stoichiometric or slightly Cu-rich CuIn1-xGaxSe2. Only a minimal amount of indium was added to the electrodeposited precursor films by physical vapor deposition to obtain a 9.4%-efficient device. (C) 2002 Elsevier Science B.V. All rights reserved.

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页码：331 / 337

页数：7

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