SiGe-Si quantum-well electroabsorption modulators

被引：28

作者：

Qasaimeh, O ^{[1
]}

Bhattacharya, P

Croke, ET

机构：

[1] Univ Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USA

[2] Hughes Res Labs, Malibu, CA 90265 USA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1998年 / 10卷 / 06期

关键词：

electroabsorption; modulators; silicon-germanium;

D O I：

10.1109/68.681491

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have measured the characteristics of SiGe-Si quantum-web (QW) waveguide electroabsorption modulators grown by molecular beam epitaxy (MBE). The modulation is based on the decoupling of the electron wavefunction from the shallow wells for electrons with a small band-bending. A 100-mu m-long modulator demonstrates contrast ratio and insertion loss of 1.43 and 28.5 dB, respectively.

引用

页码：807 / 809

页数：3

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