Scanning probe anodization: Nanolithography using thin films of anodically oxidizable materials as resists

被引:61
作者
Sugimura, H
Nakagiri, N
机构
[1] Tsukuba Research Laboratory, Nikon Corporation, Tsukuba 300-26
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 1996年 / 14卷 / 03期
关键词
D O I
10.1116/1.580271
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We report scanning probe microscope (SPM) nanolithography that uses thin films patternable by scanning probe anodization as resists. An organosilane monolayer composed of trimethylsilyl [-Si(CH3)(3)] groups was prepared by chemical vapor deposition on a Si substrate. It was then patterned through the localized degradation of the monolayer as a result of anodic reactions induced beneath a SPM tip. The fabricated patterns on the resist were transferred into the substrate Si by area-selective chemical etching in an aqueous NH4F/H2O2 solution. Consequently, grooves narrower than 100 nm were successfully fabricated. We have also developed another resist system for SPM lithography that is compatible with a wide range of surfaces, including insulators. The resist consisted of a thin Ti film covered with a fluoroalkylsilane monolayer. The monolayer was degraded along a tip-scanning trace. This patterned resist was etched in a dilute HF solution. The chemical etching of the underlying Ti him proceeded selectively in the region where the monolayer had been degraded, and the pattern was transferred into the Ti resist film. (C) 1996 American Vacuum Society.
引用
收藏
页码:1223 / 1227
页数:5
相关论文
共 27 条
  • [11] Application of STM Nanometer-Size Oxidation Process to Planar-Type MIM Diode
    MATSUMOTO, K
    TAKAHASHI, S
    ISHII, M
    HOSHI, M
    KUROKAWA, A
    ICHIMURA, S
    ANDO, A
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1995, 34 (2B): : 1387 - 1390
  • [12] LITHOGRAPHY WITH THE SCANNING TUNNELING MICROSCOPE
    MCCORD, MA
    PEASE, RFW
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (01): : 86 - 88
  • [13] LIFT-OFF METALLIZATION USING POLY(METHYL METHACRYLATE) EXPOSED WITH A SCANNING TUNNELING MICROSCOPE
    MCCORD, MA
    PEASE, RFW
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (01): : 293 - 296
  • [14] MURAKAMI K, 1992, P SOC PHOTO-OPT INS, V1742, P614
  • [15] PROXIMAL PROBE STUDY OF SELF-ASSEMBLED MONOLAYER RESIST MATERIALS
    PERKINS, FK
    DOBISZ, EA
    BRANDOW, SL
    KOLOSKI, TS
    CALVERT, JM
    RHEE, KW
    KOSAKOWSKI, JE
    MARRIAN, CRK
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (06): : 3725 - 3730
  • [16] FABRICATION OF GAAS NANOSTRUCTURES WITH A SCANNING TUNNELING MICROSCOPE
    SNOW, ES
    CAMPBELL, PM
    SHANABROOK, BV
    [J]. APPLIED PHYSICS LETTERS, 1993, 63 (25) : 3488 - 3490
  • [17] SCANNING TUNNELING MICROSCOPE TIP-INDUCED ANODIZATION FOR NANOFABRICATION OF TITANIUM
    SUGIMURA, H
    UCHIDA, T
    KITAMURA, N
    MASUHARA, H
    [J]. JOURNAL OF PHYSICAL CHEMISTRY, 1994, 98 (16) : 4352 - 4357
  • [18] DEGRADATION OF A TRIMETHYLSILYL MONOLAYER ON SILICON SUBSTRATES INDUCED BY SCANNING PROBE ANODIZATION
    SUGIMURA, H
    NAKAGIRI, N
    [J]. LANGMUIR, 1995, 11 (10) : 3623 - 3625
  • [19] MASKLESS PATTERNING OF SILICON SURFACE-BASED ON SCANNING TUNNELING MICROSCOPE TIP-INDUCED ANODIZATION AND CHEMICAL ETCHING
    SUGIMURA, H
    YAMAMOTO, T
    NAKAGIRI, N
    MIYASHITA, M
    ONUKI, T
    [J]. APPLIED PHYSICS LETTERS, 1994, 65 (12) : 1569 - 1571
  • [20] MODIFICATION OF N-SI(100) SURFACE BY SCANNING TUNNELING MICROSCOPE TIP-INDUCED ANODIZATION UNDER NITROGEN ATMOSPHERE
    SUGIMURA, H
    KITAMURA, N
    MASUHARA, H
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1994, 33 (1B): : L143 - L145