Occurrence of Rotation Domains in Heteroepitaxy

被引：78

作者：

Grundmann, Marius ^{[1
]}

Boentgen, Tammo ^{[1
]}

Lorenz, Michael ^{[1
]}

机构：

[1] Univ Leipzig, Inst Expt Phys 2, D-04103 Leipzig, Germany

来源：

PHYSICAL REVIEW LETTERS | 2010年 / 105卷 / 14期

关键词：

CHEMICAL-VAPOR-DEPOSITION; WALLED CARBON NANOTUBES; INFRARED DIELECTRIC FUNCTIONS; MOLECULAR-BEAM EPITAXY; THIN-FILM GROWTH; R-PLANE SAPPHIRE; ZNO FILMS; ORIENTED GROWTH; SILICON; SUBSTRATE;

D O I：

10.1103/PhysRevLett.105.146102

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Heteroepitaxy can involve materials with a misfit of crystal structure. Rotation domains in the epilayer are a fundamental consequence. We derive a general expression for their (minimum) number which is determined by the mismatch of the rotational symmetries of the substrate and epilayer. In the case of a mismatch of rotational symmetry, the number of rotation domains of material A on material B is different from that of B on A. A larger number of rotation domains can occur due to domain structure or nearly fulfilled additional symmetries of the substrate surface.

引用

页数：4

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