Occurrence of Rotation Domains in Heteroepitaxy

被引：78

作者：

Grundmann, Marius ^{[1
]}

Boentgen, Tammo ^{[1
]}

Lorenz, Michael ^{[1
]}

机构：

[1] Univ Leipzig, Inst Expt Phys 2, D-04103 Leipzig, Germany

来源：

PHYSICAL REVIEW LETTERS | 2010年 / 105卷 / 14期

关键词：

CHEMICAL-VAPOR-DEPOSITION; WALLED CARBON NANOTUBES; INFRARED DIELECTRIC FUNCTIONS; MOLECULAR-BEAM EPITAXY; THIN-FILM GROWTH; R-PLANE SAPPHIRE; ZNO FILMS; ORIENTED GROWTH; SILICON; SUBSTRATE;

D O I：

10.1103/PhysRevLett.105.146102

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Heteroepitaxy can involve materials with a misfit of crystal structure. Rotation domains in the epilayer are a fundamental consequence. We derive a general expression for their (minimum) number which is determined by the mismatch of the rotational symmetries of the substrate and epilayer. In the case of a mismatch of rotational symmetry, the number of rotation domains of material A on material B is different from that of B on A. A larger number of rotation domains can occur due to domain structure or nearly fulfilled additional symmetries of the substrate surface.

引用

页数：4

共 48 条

[21]

Liang S, 1998, J ELECTRON MATER, V27, pL72, DOI 10.1007/s11664-998-0083-6

[22] Epitaxial relationship of ZnO film with Si (001) substrate and its effect on growth and morphology [J].

Liu, Z. W. ;

Sun, C. W. ;

Gu, J. F. ;

Zhang, Q. Y. .

APPLIED PHYSICS LETTERS, 2006, 88 (25)

[23] SINGLE-CRYSTAL SILICON ON SAPPHIRE SUBSTRATE [J].

MANASEVIT, HM ;

SIMPSON, WI .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (04) :1349-&

[24] Oriented growth of single-walled carbon nanotubes on a MgO(001) surface [J].

Maret, Mireille ;

Hostache, Karine ;

Schouler, Marie-Claude ;

Marcus, Bernadette ;

Roussel-Dherbey, Francine ;

Albrecht, Manfred ;

Gadelle, Patrice .

CARBON, 2007, 45 (01) :180-187

[25] Structure of cubic polytype indium nitride layers on top of modified sapphire substrates [J].

Morales, F. M. ;

Lozano, J. G. ;

Garcia, R. ;

Lebedev, V. ;

Wang, Ch. Y. ;

Cimalla, V. ;

Ambacher, O. ;

Gonzalez, D. .

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 2 2008, 2008, 5 (02) :514-+

[26] Growth and characterization of undoped ZnO films for single crystal based device use by radical source molecular beam epitaxy (RS-MBE) [J].

Nakahara, K ;

Takasu, H ;

Fons, P ;

Iwata, K ;

Yamada, A ;

Matsubara, K ;

Hunger, R ;

Niki, S .

JOURNAL OF CRYSTAL GROWTH, 2001, 227 :923-928

[27] Domain epitaxy: A unified paradigm for thin film growth [J].

Narayan, J ;

Larson, BC .

JOURNAL OF APPLIED PHYSICS, 2003, 93 (01) :278-285

[28] EPITAXIAL-GROWTH OF MGO ON GAAS(001) FOR GROWING EPITAXIAL BATIO3 THIN-FILMS BY PULSED LASER DEPOSITION [J].

NASHIMOTO, K ;

FORK, DK ;

GEBALLE, TH .

APPLIED PHYSICS LETTERS, 1992, 60 (10) :1199-1201

[29] Heteroepitaxial growth of β-LiGaO2 thin films on ZnO [J].

Ohkubo, I ;

Hirose, C ;

Tamura, K ;

Nishii, J ;

Saito, H ;

Koinuma, H ;

Ahemt, P ;

Chikyow, T ;

Ishii, T ;

Miyazawa, S ;

Segawa, Y ;

Fukumura, T ;

Kawasaki, M .

JOURNAL OF APPLIED PHYSICS, 2002, 92 (09) :5587-5589

[30] CRYSTALLOGRAPHY OF DOMAIN FORMATION AND DISLOCATIONS IN BILAYERS AND MULTILAYERS [J].

POND, RC .

CRC CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES, 1989, 15 (05) :441-472

← 1 2 3 4 5 →