Deposition of HfO2 on germanium and the impact of surface pretreatments

被引：67

作者：

Van Elshocht, S ^{[1
]}

Brijs, B ^{[1
]}

Caymax, M ^{[1
]}

Conard, T ^{[1
]}

Chiarella, T ^{[1
]}

De Gendt, S ^{[1
]}

De Jaeger, B ^{[1
]}

Kubicek, S ^{[1
]}

Meuris, M ^{[1
]}

Onsia, B ^{[1
]}

Richard, O ^{[1
]}

Teerlinck, I ^{[1
]}

Van Steenbergen, J ^{[1
]}

Zhao, C ^{[1
]}

Heyns, M ^{[1
]}

机构：

[1] IMEC VZW, B-3001 Louvain, Belgium

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 17期

关键词：

D O I：

10.1063/1.1810642

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The deposition behavior of HfO2 by metalorganic chemical vapor deposition on germanium has been investigated. HfO2 films can be deposited on Ge with equally good quality as compared to high-k growth on silicon. Surface preparation is very important: compared to an HF-last, NH3 pretreatments result in smoother films with strongly reduced diffusion of germanium in the HfO2 film, resulting in a much better electrical performance. We clearly show that much thinner interfacial layers can be obtained, approximately half the thickness of what is typically found for depositions on silicon, suggesting the possibility of more aggressive equivalent oxide thickness/leakage scaling. (C) 2004 American Institute of Physics.

引用

页码：3824 / 3826

页数：3

共 12 条

[1]

[Anonymous], INT TECHNOLOGY ROADM

[2]

BAI WP, 2003, S VLSI TECHN, P121

[3] Preparation of clean and atomically flat germanium(001) surfaces [J].