High affinity self-assembled monolayers for copper CVD

被引:14
作者
Doppelt, P
Semaltianos, N
Cavellin, CD
Pastol, JL
Ballutaud, D
机构
[1] CNRS, Ctr Etud Chim Met, F-94407 Vitry Sur Seine, France
[2] GPMD Univ Paris 12, F-94010 Creteil, France
[3] Lab Phys Solides & Cristallogenese, F-92195 Meudon, France
关键词
copper chemical vapor deposition; diffusion barrier; self-assembled monolayer;
D O I
10.1016/j.mee.2004.07.023
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Copper thin films were grown on SiO2 substrates by chemical vapor deposition using the precursor (MHY)Cu(hfac) and were examined by scanning electron microscopy. The affinity for copper chemical vapor deposition of the substrate surface is higher after the formation of self-assembled monolayers of 3-mercaptopropyltrimethoxysilane onto the substrate surface. Furthermore, the affinity is greatly enhanced by a subsequent UV-light irradiation of the organosilane monolayer, in air, prior to deposition. Hence, sticky copper films were obtained by copper CVD on flat and patterned surfaces. We have demonstrated by XPS that the initial surfacic thiol groups that have been oxidized into sulfonic type groups act as nucleation sites for copper CVD. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:113 / 118
页数:6
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