Spatially resolved series resistance of silicon solar cells obtained from luminescence imaging

被引：212

作者：

Trupke, T. ^{[1
]}

Pink, E. ^{[1
]}

Bardos, R. A. ^{[1
]}

Abbott, M. D. ^{[1
]}

机构：

[1] Univ New S Wales, Ctr Excellence Adv Silicon Photovoltaics & Photon, Sydney, NSW 2052, Australia

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 09期

基金：

澳大利亚研究理事会;

关键词：

Silicon solar cells;

D O I：

10.1063/1.2709630

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The fast determination of the spatially resolved series resistance of silicon solar cells from luminescence images is demonstrated. Strong lateral variation of the series resistance determined from luminescence images taken on an industrial screen printed silicon solar cell is confirmed qualitatively by a Corescan measurement and quantitatively by comparison with the total series resistance obtained from the terminal characteristics of the cell. Compared to existing techniques that measure the spatially resolved series resistance, luminescence imaging has the advantage that it is nondestructive and orders of magnitude faster. (c) 2007 American Institute of Physics.

引用

页数：3

共 12 条

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