Localized exciton and its stimulated emission in surface mode from single-layer InxGa1-xN

被引：109

作者：

Satake, A ^{[1
]}

Masumoto, Y

机构：

[1] Univ Tsukuba, Inst Phys, Tsukuba, Ibaraki 305, Japan

[2] Sony Corp, Res Ctr, Kanagawa 240, Japan

来源：

PHYSICAL REVIEW B | 1998年 / 57卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.57.R2041

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Exciton localization in InxGa1-xN was studied. At 2 K, the time-integrated photoluminescence (PL) spectrum showed a Stokes shift from the absorption shoulder and broadening at the lower photon energy side. Site-selectively excited PL measurements determined the mobility edge. The exciton relaxation processes were studied by use of time-resolved PL spectroscopy. The PL decay time increased with the decrease of the detection-photon energy, indicating the dynamical features of exciton localization. In addition, we observed localized exciton luminescence turned into stimulated emission just below the mobility edge.

引用

页码：R2041 / R2044

页数：4

共 15 条

[1] Spontaneous emission of localized excitons in InGaN single and multiquantum well structures
Chichibu, S
Azuhata, T
Sota, T
Nakamura, S
[J]. APPLIED PHYSICS LETTERS, 1996, 69 (27) : 4188 - 4190
[2] FLUORESCENCE LINE NARROWING, LOCALIZED EXCITON-STATES, AND SPECTRAL DIFFUSION IN THE MIXED SEMICONDUCTOR CDSXSE1-X
COHEN, E
STURGE, MD
[J]. PHYSICAL REVIEW B, 1982, 25 (06) : 3828 - 3840
[3] EXCITONIC GAIN AND LASER-EMISSION IN ZNSE-BASED QUANTUM-WELLS
DING, J
JEON, H
ISHIHARA, T
HAGEROTT, M
NURMIKKO, AV
LUO, H
SAMARTH, N
FURDYNA, J
[J]. PHYSICAL REVIEW LETTERS, 1992, 69 (11) : 1707 - 1710
[4] SUBNANOSECOND SPECTROSCOPY OF DISORDER-LOCALIZED EXCITONS IN CDS0.53SE0.47
KASH, JA
RON, A
COHEN, E
[J]. PHYSICAL REVIEW B, 1983, 28 (10): : 6147 - 6150
[5] LUMINESCENCE AND GAIN SPECTROSCOPY OF DISORDERED CDS1-XSEX UNDER HIGH-EXCITATION
MAJUMDER, FA
SHEVEL, S
LYSSENKO, VG
SWOBODA, HE
KLINGSHIRN, C
[J]. ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER, 1987, 66 (04): : 409 - 418
[6] InGaN-based multi-quantum-well-structure laser diodes
Nakamura, S
Senoh, M
Nagahama, S
Iwasa, N
Yamada, T
Matsushita, T
Kiyoku, H
Sugimoto, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1996, 35 (1B): : L74 - L76
[7] Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes with a lifetime of 27 hours
Nakamura, S
Senoh, M
Nagahama, S
Iwasa, N
Yamada, T
Matsushita, T
Sugimoto, Y
Kiyoku, H
[J]. APPLIED PHYSICS LETTERS, 1997, 70 (11) : 1417 - 1419
[8] SUPERBRIGHT GREEN INGAN SINGLE-QUANTUM-WELL-STRUCTURE LIGHT-EMITTING-DIODES
NAKAMURA, S
SENOH, M
IWASA, N
NAGAHAMA, S
YAMADA, T
MUKAI, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1995, 34 (10B): : L1332 - L1335
[9] Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nm
Narukawa, Y
Kawakami, Y
Funato, M
Fujita, S
Fujita, S
Nakamura, S
[J]. APPLIED PHYSICS LETTERS, 1997, 70 (08) : 981 - 983
[10] Recombination dynamics of localized excitons in In0.20Ga0.80N-In0.05Ga0.95 multiple quantum wells
Narukawa, Y
Kawakami, Y
Fujita, S
Fujita, S
Nakamura, S
[J]. PHYSICAL REVIEW B, 1997, 55 (04) : R1938 - R1941

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