A detailed experimental investigation of impact ionization in n-channel metal-oxide-semiconductor field-effect-transistors at very low drain voltages

被引：7

作者：

Anil, KG

Mahapatra, S

Eisele, I

机构：

[1] Interuniv Microelect Ctr, B-3001 Louvain, Belgium

[2] Indian Inst Technol, Dept Elect Engn, Bombay 400076, Maharashtra, India

[3] Univ Bundeswehr Munich, Dept Elect Engn, Inst Phys, D-85579 Neubiberg, Germany

来源：

SOLID-STATE ELECTRONICS | 2003年 / 47卷 / 06期

关键词：

silicon; MOSFET; hot-carrier; impact ionization; Monte-Carlo simulation; electron energy distribution; thermal tail; electron-electron interactions;

D O I：

10.1016/S0038-1101(02)00458-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A detailed experimental investigation of impact ionization in n-channel metal-oxide-semiconductor field-effect-transistors (n-MOSFET) for drain voltages close to and below the bandgap voltage is presented. The data is analyzed based on recent full-band Monte-Carlo results available in the literature. It is shown that the broadening of the tail of the electron energy distribution (EED) by electron-electron interactions (EEI) has an observable impact on hot-electron effects of n-MOSFETs of gate length of even 5 mum. Impacts of channel length scaling and gate voltage on the broadening of EED tail by EEI are also examined, and a model to explain the observed dependencies has been proposed. (C) 2003 Elsevier Science Ltd. All rights reserved.

引用

页码：995 / 1001

页数：7

共 15 条

[1] A MULTIBAND MONTE-CARLO APPROACH TO COULOMB INTERACTION FOR DEVICE ANALYSIS [J].