Growth of vertically aligned Si wire arrays over large areas (>1 cm2) with Au and Cu catalysts

被引：248

作者：

Kayes, Brendan M. ^{[1
]}

Filler, Michael A. ^{[1
]}

Putnam, Morgan C. ^{[1
]}

Kelzenberg, Michael D. ^{[1
]}

Lewis, Nathan S. ^{[1
]}

Atwater, Harry A. ^{[1
]}

机构：

[1] CALTECH, Pasadena, CA 91125 USA

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 10期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2779236

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Arrays of vertically oriented Si wires with diameters of 1.5 mu m and lengths of up to 75 mu m were grown over areas > 1 cm(2) by photolithographically patterning an oxide buffer layer, followed by vapor-liquid-solid growth with either Au or Cu as the growth catalyst. The pattern fidelity depended critically on the presence of the oxide layer, which prevented migration of the catalyst on the surface during annealing and in the early stages of wire growth. These arrays can be used as the absorber material in novel photovoltaic architectures and potentially in photonic crystals in which large areas are needed.

引用

页数：3

共 25 条

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Growth of vertically aligned Si wire arrays over large areas (&gt;1 cm2) with Au and Cu catalysts

Growth of vertically aligned Si wire arrays over large areas (>1 cm2) with Au and Cu catalysts