High mobility top-gated poly(3-hexylthiophene) field-effect transistors with high work-function Pt electrodes

被引：54

作者：

Baeg, Kang-Jun ^{[2
,3
]}

Khim, Dongyoon ^{[2
]}

Kim, Dong-Yu ^{[2
]}

Koo, Jae Bon ^{[3
]}

You, In-Kyu ^{[3
]}

Choi, Won San ^{[4
]}

Noh, Yong-Young ^{[1
,3
]}

机构：

[1] Hanbat Natl Univ, Dept Chem Engn, Taejon 305719, South Korea

[2] Gwangju Inst Sci & Technol GIST, Dept Mat Sci & Engn, Heeger Ctr Adv Mat, Kwangju 500712, South Korea

[3] Elect & Telecommun Res Inst ETRI, Convergence Components & Mat Lab, Taejon 305350, South Korea

[4] Korea Basic Sci Inst KBSI, Jeonju 561756, South Korea

来源：

THIN SOLID FILMS | 2010年 / 518卷 / 14期

基金：

新加坡国家研究基金会;

关键词：

Organic field-effect transistors; Poly(3-hexylthiophene); Contact resistance; Pt electrode; POLYMER; PERFORMANCE; SEMICONDUCTORS; POLYTHIOPHENE; DEPENDENCE; INJECTION;

D O I：

10.1016/j.tsf.2010.01.026

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report high-performance top-gated organic field-effect transistors (OFETs) with regio-regular poly(3-hexylthiophene) (rr-P3HT). The high charge carrier mobility in rr-P3HT FETs (0.4 cm(2)/Vs) was achieved due to the relatively low contact resistance and high crystallinity of rr-P3HT films. The contact resistance was controlled mainly through the use of high work-function platinum (Pt) (5.6 eV) for the charge injection electrode and a top-gate, bottom-contact geometry that enabled an enhanced current injection via current crowding in the staggered device structure. Moreover, the top-gate configuration provided improved device stability in air ambient conditions via the presence of a gate dielectric and gate electrode on top of the organic semiconductor. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：4024 / 4029

页数：6

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