Effects of supercritical CO2 fluid on sputter-deposited hafnium oxide

被引：12

作者：

Liu, Po-Tsun

Tsai, Chih-Tsung

Yang, Po-Yu

机构：

[1] Natl Chiao Tung Univ, Dept Photon, Hsinchu 300, Taiwan

[2] Natl Chiao Tung Univ, Display Inst, Hsinchu 300, Taiwan

[3] Natl Tsing Hua Univ, Inst Elect Engn, Hsinchu 300, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 22期

关键词：

D O I：

10.1063/1.2743747

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Low-temperature supercritical fluid (SCF) technology is employed to improve the dielectric characteristics of metal oxide film deposited at low temperature. In this investigation, hafnium oxide (HfO2) film was sputter deposited at room temperature and post-treated with SCF at 150 degrees C, replacing typical high-temperature annealing process. From Fourier transformation infrared and thermal desorption spectroscopy measurement, the absorption peaks of Hf-O-Hf bonding and the oxygen content in HfO2 film have, respectively, shown apparent raise. The leakage current density of the low-temperature deposited HfO2 film is reduced significantly, and the conduction mechanism is modified from trap-assisted quantum tunneling to thermionic emission process, since SCF treatment effectively reduces the number of traps in HfO2 film. (C) 2007 American Institute of Physics.

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页数：3

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