Characterization of the refractive index of strained GaInNAs layers by spectroscopic ellipsometry

被引:23
作者
Kitatani, T [1 ]
Kondow, M [1 ]
Shinoda, K [1 ]
Yazawa, Y [1 ]
Okai, M [1 ]
机构
[1] Hitachi Ltd, Cent Res Lab, RWCP Optoelect Hitachi Lab, Tokyo 185, Japan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1998年 / 37卷 / 3A期
关键词
GaInNAs; spectroscopic ellipsometry;
D O I
10.1143/JJAP.37.753
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have characterized the refractive index of strained GaInNAs layers. Using spectroscopic ellipsometry (SE), the variation in optical constants of GaInNAs layers, about 6 nm thick with a nitrogen content lower than 1%, can be clearly observed. Analysis of the SE data, including the strain effect in the layer, clarified that the refractive index of GaInNAs increases in proportion to the nitrogen content. While the trend for increase in refractive index with a decrease in the bandgap energy is the same as that observed in conventional III-V alloy semiconductors, the rate of increase is found to be much larger than that in GaInAs. This result suggests a large density of states in the conduction band characteristics of this type of material system that includes nitrogen atoms.
引用
收藏
页码:753 / 757
页数:5
相关论文
共 10 条
[1]  
AFROMOWITZ MA, 1974, SOLID STATE COMMUN, V15, P56
[2]  
KITATANI T, 1997, JPN SOC APPL PHYS, P333
[3]   Room-temperature continuous-wave operation of GaInNAs/GaAs laser diode [J].
Kondow, M ;
Natatsuka, S ;
Kitatani, T ;
Yazawa, Y ;
Okai, M .
ELECTRONICS LETTERS, 1996, 32 (24) :2244-2245
[4]   GaInNAs: A novel material for long-wavelength-range laser diodes with excellent high-temperature performance [J].
Kondow, M ;
Uomi, K ;
Niwa, A ;
Kitatani, T ;
Watahiki, S ;
Yazawa, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1996, 35 (2B) :1273-1275
[5]  
KONDOW M, 1996, P MRS J S, P42
[6]   DIELECTRIC FUNCTIONS AND CRITICAL-POINTS OF STRAINED INXGA1-XAS ON GAAS [J].
PICKERING, C ;
CARLINE, RT ;
EMENY, MT ;
GARAWAL, NS ;
HOWARD, LK .
APPLIED PHYSICS LETTERS, 1992, 60 (19) :2412-2414
[7]   ELLIPSOMETRIC ANALYSIS OF STRAINED INGAXAS1-X/GAAS QUANTUM-WELL STRUCTURES [J].
SAITOH, T ;
WATANABE, Y ;
TSUCHIYA, T .
DENKI KAGAKU, 1995, 63 (06) :489-493
[8]   Room-temperature operation of GaInNAs/GaInP double-heterostructure laser diodes grown by metalorganic chemical vapor deposition [J].
Sato, SI ;
Osawa, Y ;
Saitoh, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (5A) :2671-2675
[9]   MODELING ALXGA1-XAS OPTICAL-CONSTANTS AS FUNCTIONS OF COMPOSITION [J].
SNYDER, PG ;
WOOLLAM, JA ;
ALTEROVITZ, SA ;
JOHS, B .
JOURNAL OF APPLIED PHYSICS, 1990, 68 (11) :5925-5926
[10]  
UESUGI K, 1997, P 6 ICCBE MONTR SWIT