ELLIPSOMETRIC ANALYSIS OF STRAINED INGAXAS1-X/GAAS QUANTUM-WELL STRUCTURES

被引：1

作者：

SAITOH, T ^{[1
]}

WATANABE, Y ^{[1
]}

TSUCHIYA, T ^{[1
]}

机构：

[1] HITACHI CABLE LTD, ADV RES CTR, HITACHI, IBARAKI 31914, JAPAN

来源：

DENKI KAGAKU | 1995年 / 63卷 / 06期

关键词：

SPECTROSCOPIC ELLIPSOMETRY; INXGA1-XAS; STRAINED LAYER; DIELECTRIC FUNCTION; QUANTUM WELL STRUCTURES;

D O I：

10.5796/kogyobutsurikagaku.63.489

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Spectroscopic ellipsometry is used to obtain dielectric function spectra of strained and relaxed InxGa1-xAs layers. E(1) and E(1)+Delta(1) critical point energies are calculated by line-shape fitting of the second differentials of the dielectric functions. Using the dielectric functions, thicknesses and compositions for GaAs/InxGa1-xAs single quantum well structures on GaAs substrates can be determined by fitting measured tan Psi and cos Delta to calculated ones. In addition, a complex (GaAs/InxGa1-xAs)(3) quantum well structure is successfully characterized using single and multi-angle incident measurements.

引用

页码：489 / 493

页数：5

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