Growth and characterization of silicon carbide nanowires

被引：29

作者：

Park, BT ^{[1
]}

Ryu, YW ^{[1
]}

Yong, KJ ^{[1
]}

机构：

[1] Pohang Univ Sci & Technol, POSTECH, Surface Chem Lab Elect Mat, Dept Chem Engn, Pohang 790784, South Korea

来源：

SURFACE REVIEW AND LETTERS | 2004年 / 11卷 / 4-5期

关键词：

low dimensional structures; nanowires; growth models; SiC;

D O I：

10.1142/S0218625X04006311

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A simple, direct synthesis method was used to grow the core-shell SiC-SiOx nanowires by heating the NiO catalyzed silicon substrate. The carbothermal reduction of WO3 by C provided a reductive environment to synthesize the crystalline SiC nanowires covered with the SiOx sheath in the growth temperature of 1000-1100degreesC. After hydrofluoric acid (HF) etching, the cubic beta-SiC nanowires were extracted from the core-shell nanowires in large quantities. A solid-liquid-solid (SLS) mechanism was proposed for the growth of the core-shell SiC-SiOx nanowires.

引用

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页码：373 / 378

页数：6

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