Effect of Sn doping on the thermoelectric properties of ErNiSb-based p-type half-Heusler compound

被引：36

作者：

Kawano, Kenta ^{[1
]}

Kurosaki, Ken ^{[1
]}

Sekimoto, Takeyuki ^{[1
]}

Muta, Hiroaki ^{[1
]}

Yamanaka, Shinsuke ^{[1
]}

机构：

[1] Osaka Univ, Grad Sch Engn, Div Sustainable Energy & Environm Engn, Suita, Osaka 5650871, Japan

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 06期

关键词：

D O I：

10.1063/1.2769398

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors characterized polycrystalline samples of Sn-doped ErNiSb "ErNiSnxSb1-x (x=0, 0.01, 0.03, and 0.05)" to develop p-type half-Heusler thermoelectric materials. All samples prepared in this study exhibited positive Seebeck coefficients. With increasing Sn content x, the carrier concentration increased, leading to decreases in both electrical resistivity (rho) and the Seebeck coefficient (S). Thermal conductivity (kappa) values were at a similar level in all of the compositions. Sn-doping improved the thermoelectric figure of merit ZT(=(ST)-T-2/rho/kappa) of ErNiSb; the maximum ZT value was 0.29 at 669 K, obtained in the composition ErNiSn0.01Sb0.99.

引用

页数：3

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