Fluence dependence of the formation of open-volume defects in silicon after ion implantation

The fluence-dependent evolution of open-volume defects in Si(100) implanted at room temperature with boron, phosphorus, silicon, and arsenic ions was measured by means of positron beam technique in the as-implanted state. The defect investigations were completed by RES measurements. In general, both of these integral methods show a square-root dependence of the defect density on the fluence. This dependence is in an agreement with the model of homogeneous defect nucleation. A deviation from this law is detected only for the silicon self-implantation due to an increased recombination of self-interstitials and silicon vacancies during the implantation process.