CHARGE-STATE DEPENDENCES OF POSITRON TRAPPING RATES ASSOCIATED WITH DIVACANCIES AND VACANCY-PHOSPHORUS PAIRS IN SI

被引:42
作者
KAWASUSO, A [1 ]
HASEGAWA, M [1 ]
SUEZAWA, M [1 ]
YAMAGUCHI, S [1 ]
SUMINO, K [1 ]
机构
[1] TOHOKU UNIV,INST MAT RES,SENDAI,MIYAGI 980,JAPAN
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1995年 / 34卷 / 5A期
关键词
DIVACANCY; VACANCY-PHOSPHORUS PAIR; SI; POSITRON LIFETIME; POSITRON TRAPPING; ELECTRON IRRADIATION;
D O I
10.1143/JJAP.34.2197
中图分类号
O59 [应用物理学];
学科分类号
摘要
Charge state dependences of positron trapping rates associated with divacancies and vacancy-phosphorus pairs in Si have been studied by controlling the Fermi level systematically. The specific trapping rates of both a divacancy and a vacancy-phosphorus pair increase with an increase in the negative charge on them. A positively charged divacancy shows no detectable positron trapping. Such charge state dependences of the positron trapping rates clearly show that the long-range Coulomb interactions between a positron and a charged divacancy or a charged vacancy-phosphorus pair play an important role in the trapping process.
引用
收藏
页码:2197 / 2206
页数:10
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