Ce- and Yb-based Kondo semiconductors

被引:145
作者
Takabatake, T [1 ]
Iga, F
Yoshino, T
Echizen, Y
Katoh, K
Kobayashi, K
Higa, M
Shimizu, N
Bando, Y
Nakamoto, G
Fujii, H
Izawa, K
Suzuki, T
Fujita, T
Sera, M
Hiroi, M
Maezawa, K
Mock, S
Von Lohneysen, H
Bruckl, A
Neumaier, K
Andres, K
机构
[1] Hiroshima Univ, Fac Sci, Dept Mat Sci, Higashihiroshima 739, Japan
[2] Hiroshima Univ, Fac Integrated Arts & Sci, Higashihiroshima 739, Japan
[3] Toyama Prefectural Univ, Fac Engn, Sendai, Miyagi 93903, Japan
[4] Univ Karlsruhe, Inst Phys, D-76128 Karlsruhe, Germany
[5] Walther Meissner Inst Tieftemp Forsch, D-85748 Garching, Germany
关键词
Kondo effect; electric resistivity; Hall effect; hybridization;
D O I
10.1016/S0304-8853(97)00842-1
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Kondo semiconductors are a class of strongly correlated f-electron materials whose low-energy excitations exhibit a (pseudo)gap at low temperatures. The significant difference between the pseudogap in orthorhombic CeNiSn and CeRhSb and the real gap in cubic Ce(3)Bi(4)Pt(3) and YbB(12) is highlighted by a comparison of transport properties. Low-temperature measurements of the magnetoresistance, Hall coefficient and specific heat of CeNiSn have revealed a field-induced excitation of the coherent low-carrier state. A systematic study of CeNi(1-x)T(x)Sn (T = Co, Cu and Pt) has shown that the residual carriers in CeNiSn are immobilized by 1% substitution irrespective of the substitutes. Further substitution with 5% Cu induces a magnetic instability at T = 0. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:277 / 282
页数:6
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