Ce- and Yb-based Kondo semiconductors

被引：145

作者：

Takabatake, T ^{[1
]}

Iga, F

Yoshino, T

Echizen, Y

Katoh, K

Kobayashi, K

Higa, M

Shimizu, N

Bando, Y

Nakamoto, G

Fujii, H

Izawa, K

Suzuki, T

Fujita, T

Sera, M

Hiroi, M

Maezawa, K

Mock, S

Von Lohneysen, H

Bruckl, A

Neumaier, K

Andres, K

机构：

[1] Hiroshima Univ, Fac Sci, Dept Mat Sci, Higashihiroshima 739, Japan

[2] Hiroshima Univ, Fac Integrated Arts & Sci, Higashihiroshima 739, Japan

[3] Toyama Prefectural Univ, Fac Engn, Sendai, Miyagi 93903, Japan

[4] Univ Karlsruhe, Inst Phys, D-76128 Karlsruhe, Germany

[5] Walther Meissner Inst Tieftemp Forsch, D-85748 Garching, Germany

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 1998年 / 177卷

关键词：

Kondo effect; electric resistivity; Hall effect; hybridization;

D O I：

10.1016/S0304-8853(97)00842-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Kondo semiconductors are a class of strongly correlated f-electron materials whose low-energy excitations exhibit a (pseudo)gap at low temperatures. The significant difference between the pseudogap in orthorhombic CeNiSn and CeRhSb and the real gap in cubic Ce(3)Bi(4)Pt(3) and YbB(12) is highlighted by a comparison of transport properties. Low-temperature measurements of the magnetoresistance, Hall coefficient and specific heat of CeNiSn have revealed a field-induced excitation of the coherent low-carrier state. A systematic study of CeNi(1-x)T(x)Sn (T = Co, Cu and Pt) has shown that the residual carriers in CeNiSn are immobilized by 1% substitution irrespective of the substitutes. Further substitution with 5% Cu induces a magnetic instability at T = 0. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：277 / 282

页数：6

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