High Tg Cyclic Olefin Copolymer Gate Dielectrics for N,N′-Ditridecyl Perylene Diimide Based Field-Effect Transistors: Improving Performance and Stability with Thermal Treatment

被引:80
作者
Jang, Jaeyoung [1 ]
Nam, Sooji [1 ]
Chung, Dae Sung [1 ]
Kim, Se Hyun [1 ]
Yun, Won Min [1 ]
Park, Chan Eon [1 ]
机构
[1] Pohang Univ Sci & Technol, POSTECH Polymer Res Inst, Dept Chem Engn, Pohang 790784, South Korea
关键词
THIN-FILM TRANSISTORS; COMPLEMENTARY INVERTERS; ORGANIC SEMICONDUCTORS; LARGE-AREA; PENTACENE; MOBILITY; POLYMER; NORBORNENE; CIRCUITS; ETHYLENE;
D O I
10.1002/adfm.201000383
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
A novel application of ethylene-norbornene cyclic olefin copolymers (COC) as gate dielectric layers in organic field-effect transistors (OFETs) that require thermal annealing as a strategy for improving the OFET performance and stability is reported. The thermally-treated N,N'-ditridecyl perylene diimide (PTCDI-C13)-based n-type FETs using a COC/SiO2 gate dielectric show remarkably enhanced atmospheric performance and stability. The COC gate dielectric layer displays a hydrophobic surface (water contact angle = 95 degrees +/- 1 degrees) and high thermal stability (glass transition temperature = 181 degrees C) without producing crosslinking. After thermal annealing, the crystallinity improves and the grain size of PTCDI-C13 domains grown on the COC/SiO2 gate dielectric increases significantly. The resulting n-type FETs exhibit high atmospheric field-effect mobilities, up to 0.90 cm(2) V-1 s(-1) in the 20 V saturation regime and long-term stability with respect to H2O/O-2 degradation, hysteresis, or sweep-stress over 110 days. By integrating the n-type FETs with p-type pentacene-based FETs in a single device, high performance organic complementary inverters that exhibit high gain (exceeding 45 in ambient air) are realized.
引用
收藏
页码:2611 / 2618
页数:8
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