Measurement of C2 radical density in microwave methane/hydrogen plasma used for nanocrystalline diamond film formation

被引：28

作者：

Hiramatsu, M ^{[1
]}

Kato, K

Lau, CH

Foord, JS

Hori, M

机构：

[1] Meijo Univ, Dept Elect & Elect Engn, Tempa Ku, Nagoya, Aichi 4688502, Japan

[2] Univ Oxford, Phys & Theoret Chem Lab, Oxford OX1 3QZ, England

[3] Nagoya Univ, Dept Quantum Engn, Nagoya, Aichi 4648603, Japan

来源：

关键词：

plasma CVD; nanocrystalline; diamond film; gas phase reactions;

D O I：

10.1016/S0925-9635(02)00216-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

C-2 radical density in a conventional microwave plasma-enhanced chemical vapor deposition (MWPCVD) with CH4/H-2 mixture was measured using absorption spectroscopy. At the typical growth conditions for MWPCVD used for nanocrystalline diamond formation, C-2 radical density in the plasma was of the order of 10(12) cm(-3). Correlation between nanocrystalline diamond growth and C-2 radical density was discussed. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：365 / 368

页数：4

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