Detection of C2 radicals in low-pressure inductively coupled plasma source for diamond chemical vapor deposition

被引：18

作者：

Shiomi, T ^{[1
]}

Nagai, H ^{[1
]}

Kato, K ^{[1
]}

Hiramatsu, M ^{[1
]}

Nawata, M ^{[1
]}

机构：

[1] Meijo Univ, Dept Elect & Elect Engn, Tempaku Ku, Nagoya, Aichi 4688502, Japan

来源：

关键词：

radical; spectroscopy; plasma; CVD;

D O I：

10.1016/S0925-9635(00)00420-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The C-2 radical density was measured in a low-pressure, radio frequency (rf), inductively coupled plasma (ICP) employing a CH3OH/H-2/H2O mixture. Measurement was carried out under the conditions where predominantly diamond can be formed. At the typical growth conditions for the low-pressure, rf ICP reactor used for diamond formation, the C-2 radical density in the ICP region was of the order of 10(13) cm(-3). The correlation between the C-2 radical density and the quality of diamond films was investigated. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：388 / 392

页数：5

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