Current transport in short channel top-contact pentacene field-effect transistors investigated with the selective molecular doping technique

被引：66

作者：

Fujimori, F. ^{[1
]}

Shigeto, K.

Hamano, T.

Minari, T.

Miyadera, T.

Tsukagoshi, K.

Aoyagi, Y.

机构：

[1] RIKEN, Wako, Saitama 3510198, Japan

[2] JST, CREST, Kawaguchi, Saitama 3320012, Japan

[3] Tokyo TECH, Kanagawa 2268502, Japan

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 19期

关键词：

D O I：

10.1063/1.2737418

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The contact doping profile is controlled in the top-contact configuration to clarify a transistor operation based on a current injection process from the metal contact to the organic channel in a submicron channel pentacene field-effect transistor. The molecular doping in the pentacene film underneath the metal contact, in which a thin layer of iron (III) chloride was introduced, drastically changes transistor characteristics. The doping profile control directly revealed the resistive part for current injection. A model to explain the saturation behavior of the top-contact short channel organic transistor is presented. (C) 2007 American Institute of Physics.

引用

页数：3

共 14 条

[11]

TAUR Y, 1998, FUNDAMENTALS MODERN, P284

[12] Interface modification of a pentacene field-effect transistor with a submicron channel [J].