Size, shape, and strain dependence of the g factor in self-assembled In(Ga)As quantum dots -: art. no. 235337

被引:104
作者
Nakaoka, T [1 ]
Saito, T
Tatebayashi, J
Arakawa, Y
机构
[1] Univ Tokyo, Adv Sci & Technol Res Ctr, Tokyo 1538904, Japan
[2] Univ Tokyo, Ctr Collaborat Res, Tokyo 1538904, Japan
来源
PHYSICAL REVIEW B | 2004年 / 70卷 / 23期
关键词
D O I
10.1103/PhysRevB.70.235337
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We have investigated Zeeman splitting in single self-assembled InAs and InGaAs quantum dots experimentally and theoretically. By measuring photoluminescence from single dots, in a wide spectral region, we have obtained the exciton g factors of quantum dots with various photoluminescence energies. We find that the absolute value of the exciton g factors of InAs dots are smaller than those of the InGaAs dots, which differs from the composition dependence expected from that of the bulk ones. The experimentally obtained g factors are compared with calculated ones based on the eight-band k.p model where the influence of strain and the Zeeman effect are included. We find a good agreement between the calculation and the experiment qualitatively and quantitatively. The calculation reproduces the nontrivial composition dependence of the g factor of the quantum dots. In addition, the eight-band model predicts a size and shape dependence of the electron and hole g factors of the pyramidal quantum dots.
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页码:1 / 8
页数:8
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