In-situ reflectance monitoring during MOCVD of AlGaN

被引：39

作者：

Ng, TB ^{[1
]}

Han, J

Biefeld, RM

Weckwerth, MV

机构：

[1] Sandia Natl Labs, Albuquerque, NM 87185 USA

[2] Star Med Technol, Pleasanton, CA 94566 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1998年 / 27卷 / 04期

关键词：

AlGaN; in-situ; metalorganic chemical vapor deposition (MOCVD); reflectance;

D O I：

10.1007/s11664-998-0385-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report in-situ optical reflectance monitoring during the metalorganic chemical vapor deposition (MOCVD) growth of(AI)GaN. In addition to the well-known thin film interference effect which enables a real-time determination of growth rate, we show that several insights about the MOCVD growth process can be gained by using this simple yet powerful technique. Illustrations from a variety of applications for in-situ reflectance monitoring, specifically the study of growth evolution, the control of alloy fractions, and the use of growth rate to gauge surface kinetics and gas injection will be reported.

引用

收藏

页码：190 / 195

页数：6

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