High slope efficiency, "cascaded" midinfrared lasers with type quantum wells

被引：20

作者：

Kurtz, SR ^{[1
]}

Allerman, AA ^{[1
]}

Biefeld, RM ^{[1
]}

Baucom, KC ^{[1
]}

机构：

[1] Sandia Natl Labs, Albuquerque, NM 87185 USA

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 17期

关键词：

D O I：

10.1063/1.121286

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Lasers and light-emitting diodes with multistage, type I InAsSb/InAsP quantum well active regions are reported. These ten stage, cascaded devices were grown by metalorganic chemical vapor deposition. The broadband light-emitting diodes produced high average powers, >2 mW (similar to 80 K, 3.7 mu m) and >0.1 mW (similar to 300 K, 4.3 mu m). A 3.8-3.9 mu m laser structure operated up to T = 180 K. At 80 K, peak power >100 mW and a slope efficiency of 48% (4.8% per stage) were observed in our gain guided lasers. The slope efficiency was strongly dependent on cavity length, and analysis of efficiency data suggests an internal differential quantum efficiency >1 and a loss coefficient greater than or equal to 100 cm(-1). (C) 1998 American Institute of Physics.

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页码：2093 / 2095

页数：3

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