Self-catalyzed, pure zincblende GaAs nanowires grown on Si(111) by molecular beam epitaxy

被引：192

作者：

Cirlin, G. E. ^{[1
,2
,3
]}

Dubrovskii, V. G. ^{[1
,2
]}

Samsonenko, Yu. B. ^{[1
,2
,3
]}

Bouravleuv, A. D. ^{[1
,2
]}

Durose, K. ^{[4
]}

Proskuryakov, Y. Y. ^{[4
]}

Mendes, Budhikar ^{[4
]}

Bowen, L. ^{[4
]}

Kaliteevski, M. A. ^{[4
]}

Abram, R. A. ^{[4
]}

Zeze, Dagou ^{[4
]}

机构：

[1] St Petersburg Acad Univ, Russian Acad Sci, Nanotechnol Res & Educ Ctr, St Petersburg 194021, Russia

[2] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[3] Russian Acad Sci, Inst Analyt Instrumentat, St Petersburg 190103, Russia

[4] Univ Durham, Dept Phys, Durham DH1 3BH, England

来源：

PHYSICAL REVIEW B | 2010年 / 82卷 / 03期

基金：

英国工程与自然科学研究理事会; 俄罗斯基础研究基金会;

关键词：

LIQUID-SOLID MECHANISM; ZINC-BLENDE; POLYTYPISM;

D O I：

10.1103/PhysRevB.82.035302

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report on the Au-free molecular beam epitaxy growth of coherent GaAs nanowires directly on Si(111) substrates. The growth is catalyzed by liquid Ga droplets formed in the openings of a native oxide layer at the initial growth stage. Transmission electron microscopy studies demonstrate that the nanowires are single crystals having the zincblende structure along their length (apart from a thin wurtzite region directly below the Ga droplet), regardless of their diameter (70-80 nm) and the growth temperature range (560-630 degrees C). We attribute the observed phase purity to a much lower surface energy of liquid Ga than that of Au-Ga alloys, which makes triple line nucleation energetically unfavorable. The change in growth catalyst to a liquid metal with a lower energy suppresses the (more usual) formation of wurtzite nuclei on surface energetic grounds. These results can provide a distinct method for the fabrication of chemically pure and stacking-fault-free zincblende nanowires of III-V compounds on silicon.

引用

页数：6

共 40 条

[1] An empirical potential approach to wurtzite-zinc-blende polytypism in group III-V semiconductor nanowires [J].

Akiyama, T ;

Sano, K ;

Nakamura, K ;

Ito, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2006, 45 (8-11) :L275-L278

[2] Critical diameter for III-V nanowires grown on lattice-mismatched substrates [J].

Chuang, Linus C. ;

Moewe, Michael ;

Chase, Chris ;

Kobayashi, Nobuhiko P. ;

Chang-Hasnain, Connie ;

Crankshaw, Shanna .

APPLIED PHYSICS LETTERS, 2007, 90 (04)

[3] Critical diameters and temperature domains for MBE growth of III-V nanowires on lattice mismatched substrates [J].

Cirlin, G. E. ;

Dubrovskii, V. G. ;

Soshnikov, I. P. ;

Sibirev, N. V. ;

Samsonenko, Yu. B. ;

Bouravleuv, A. D. ;

Harmand, J. C. ;

Glas, F. .

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2009, 3 (04) :112-114

[4] Failure of the vapor-liquid-solid mechanism in Au-assisted MOVPE growth of InAs nanowires [J].

Dick, KA ;

Deppert, K ;

Mårtensson, T ;

Mandl, B ;

Samuelson, L ;

Seifert, W .

NANO LETTERS, 2005, 5 (04) :761-764

[5] Control of III-V nanowire crystal structure by growth parameter tuning [J].

Dick, Kimberly A. ;

Caroff, Philippe ;

Bolinsson, Jessica ;

Messing, Maria E. ;

Johansson, Jonas ;

Deppert, Knut ;

Wallenberg, L. Reine ;

Samuelson, Lars .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2010, 25 (02)

[6] Growth thermodynamics of nanowires and its application to polytypism of zinc blende III-V nanowires [J].

Dubrovskii, V. G. ;

Sibirev, N. V. .

PHYSICAL REVIEW B, 2008, 77 (03)

[7] Role of nonlinear effects in nanowire growth and crystal phase [J].

Dubrovskii, V. G. ;

Sibirev, N. V. ;

Cirlin, G. E. ;

Bouravleuv, A. D. ;

Samsonenko, Yu. B. ;

Dheeraj, D. L. ;

Zhou, H. L. ;

Sartel, C. ;

Harmand, J. C. ;

Patriarche, G. ;

Glas, F. .

PHYSICAL REVIEW B, 2009, 80 (20)

[8] Gibbs-Thomson and diffusion-induced contributions to the growth rate of Si, InP, and GaAs nanowires [J].

Dubrovskii, V. G. ;

Sibirev, N. V. ;

Cirlin, G. E. ;

Soshnikov, I. P. ;

Chen, W. H. ;

Larde, R. ;

Cadel, E. ;

Pareige, P. ;

Xu, T. ;

Grandidier, B. ;

Nys, J. -P. ;

Stievenard, D. ;

Moewe, M. ;

Chuang, L. C. ;

Chang-Hasnain, C. .

PHYSICAL REVIEW B, 2009, 79 (20)

[9] Growth kinetics and crystal structure of semiconductor nanowires [J].

Dubrovskii, V. G. ;

Sibirev, N. V. ;

Harmand, J. C. ;

Glas, F. .

PHYSICAL REVIEW B, 2008, 78 (23)

[10] Diffusion-induced growth of GaAs nanowhiskers during molecular beam epitaxy: Theory and experiment [J].

Dubrovskii, VG ;

Cirlin, GE ;

Soshnikov, IP ;

Tonkikh, AA ;

Sibirev, NV ;

Samsonenko, YB ;

Ustinov, VM .

PHYSICAL REVIEW B, 2005, 71 (20)

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