Electronic properties of polyindole and polycarbazole Schottky diodes

被引：67

作者：

Abthagir, PS ^{[1
]}

Saraswathi, R ^{[1
]}

机构：

[1] Madurai Kamaraj Univ, Dept Mat Sci, Madurai 625021, Tamil Nadu, India

来源：

ORGANIC ELECTRONICS | 2004年 / 5卷 / 06期

关键词：

polyindole; polyindole-5-carboxylic acid; polycarbazole; poly(N-vinyl carbazole); band gap energy; Schottky diode; junction properties;

D O I：

10.1016/j.orgel.2004.10.002

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Indole, indole-5-carboxylic acid, carbazole and N-vinylcarbazole have been polymerized electrochemically on indium tin-oxide substrates. The four polymers have been used for the construction of Schottky barriers with Al, In, Sb and Sn metals. The dark current-voltage and capacitance-voltage characteristics of the diodes have been studied to derive information on junction parameters. All the junctions showed rectification, but the estimated values of saturation current and ideality factor are high. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：299 / 308

页数：10

共 56 条

[1] Electroluminescent polycarbazole thin films obtained by electrochemical polymerization [J].

Abe, SY ;

Bemede, JC ;

Delvalle, MA ;

Tregouet, Y ;

Ragot, F ;

Diaz, FR ;

Lefrant, S .

SYNTHETIC METALS, 2002, 126 (01) :1-6

[2] Rectifying properties of poly(N-methylaniline) [J].

Syed Abthagir P. ;

Saraswathi R. .

Journal of Materials Science: Materials in Electronics, 2004, 15 (2) :81-86

[3] Junction properties of metal/polypyrrole Schottky barriers [J].

Abthagir, PS ;

Saraswathi, R .

JOURNAL OF APPLIED POLYMER SCIENCE, 2001, 81 (09) :2127-2135

[4]

ALMEIDA KD, 1988, J ELECTROANAL CHEM, V248, P233

[5] N-MOSE2 GRAFTED WITH POLYCARBAZOLE FOR AN EXTENDED LIFE OF THE PHOTOANODE [J].

ARAVAMUTHAN, S ;

CLEMENT, CL ;

MADHAVAN, S ;

SANTHANAM, KSV .

JOURNAL OF POWER SOURCES, 1990, 32 (01) :1-7

[6]

BARTLETT PN, 1992, B ELECTROCHEM, V8, P208

[7] CHEMICAL OXIDATION AND POLYMERIZATION OF INDOLE [J].

BILLAUD, D ;

MAAROUF, EB ;

HANNECART, E .

SYNTHETIC METALS, 1995, 69 (1-3) :571-572

[8] Gas-sensitive characteristics of metal/semiconductor polymer Schottky device [J].

Campos, M ;

Bulhoes, LOS ;

Lindino, CA .

SENSORS AND ACTUATORS A-PHYSICAL, 2000, 87 (1-2) :67-71

[9] POLYACRYLIC ACID-DOPED POLYANILINE AS P-TYPE SEMICONDUCTOR IN SCHOTTKY-BARRIER ELECTRONIC DEVICE [J].

CHEN, SA ;

YIH, F ;

LEE, HT .

SYNTHETIC METALS, 1993, 57 (01) :4082-4086

[10] POLYANILINE SCHOTTKY-BARRIER - EFFECT OF DOPING ON RECTIFICATION AND PHOTOVOLTAIC CHARACTERISTICS [J].

CHEN, SA ;

FANG, Y .

SYNTHETIC METALS, 1993, 60 (03) :215-222

← 1 2 3 4 5 6 →