Improvement of the luminous intensity of light-emitting diodes by using highly transparent Ag-indium tin oxide p-type ohmic contacts

被引：56

作者：

Song, JO ^{[1
]}

Leem, DS

Kwak, JS

Park, Y

Chae, SW

Seong, TY

机构：

[1] Gwangju Inst Sci & Technol, Dept Mat Sci & Engn, Kwangju 500712, South Korea

[2] Samsung Adv Inst Technol, Photon Lab, Suwon 440600, South Korea

[3] Samsung Elect Mech Co Ltd, Discrete Semiconductor Div, Suwon 443743, South Korea

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2005年 / 17卷 / 02期

关键词：

Ag; GaN; indium tin oxide (ITO); light-emitting diode (LED); ohmic contact;

D O I：

10.1109/LPT.2004.839783

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have investigated Ag-indium tin oxide (ITO) scheme for obtaining high-quality p-type ohmic contacts for GaN-based light-emitting diodes (LEDs). The Ag(1 nm)-ITO(200 nm) contacts exhibit greatly improved electrical characteristics when annealed at temperatures in the range 400 degreesC-600 degreesC for 1 min in air, yielding specific contact resistances of similar to10(-4) Omega(.)cm(2). In addition, the contacts give transmittance of about 96% at 460 nm, which is far better than that of the conventionally used oxidized Ni-Au contacts. It is shown that the luminous intensity of blue LEDs fabricated with the Ag-ITO contacts is about three times higher than that of LEDs with oxidized Ni-Au contacts. This result strongly indicates that the Ag-ITO scheme can serve as a highly promising p-type ohmic contact for the realization of high brightness near ultraviolet LEDs.

引用

页码：291 / 293

页数：3

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