Enhanced output power of InGaN-GaN light-emitting diodes with high-transparency nickel-oxide-indium-tin-oxide ohmic contacts

被引：66

作者：

Pan, SM ^{[1
]}

Tu, RC ^{[1
]}

Fan, YM ^{[1
]}

Yeh, RC ^{[1
]}

Hsu, JT ^{[1
]}

机构：

[1] Ind Technol Res Inst, Optoelect & Syst Labs, Hsinchu 310, Taiwan

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2003年 / 15卷 / 05期

关键词：

GaN; indium-tin-oxide (ITO); InGaN; light-emitting diodes (LEDs); nickel-oxide (NiO);

D O I：

10.1109/LPT.2003.810254

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This study develops a highly transparent nickel-oxide (NiOx)-indium-tin-oxide (ITO) transparent Ohmic contact with excellent current spreading for p-GaN to increase the optical output power of nitride-based light-emitting diodes (LEDs). The NiOx-ITO transparent Ohmic contact layer was. prepared,by electron beam in-situ evaporation without postdeposition annealing. Notably, the transmittance of the NiOx-ITO exceeds 90% throughout the visible, region of the spectrum. and approaches 98% at 470 nm. Moreover, GaN LED chips with dimensions of 300 x 300 mum fabricated with the NiOx-ITO transparent Ohmic contact were developed and produced A low forward voltage of 3.4 V under a nominal forward current of 20 mA and a high optical output power of 6.6 mW. The experimental results indicate that NiOx-ITO bilayer Ohmic contact with excellent current spreading And high transparency is suitable for fabricating high-brightness GaN-based light-emitting devices.

引用

页码：646 / 648

页数：3

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