A theoretical study of surfactant action in the layer-by-layer homoepitaxial growth of metals: the case of In on Cu(111)

被引：12

作者：

Jiang, M ^{[1
]}

Qiu, M

Zhao, YJ

Cao, PL

机构：

[1] Zhejiang Univ, Dept Phys, Hangzhou 310027, Peoples R China

[2] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China

[3] China Ctr Adv Sci & Technol, World Lab, Beijing 100080, Peoples R China

来源：

PHYSICS LETTERS A | 1998年 / 239卷 / 1-2期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1016/S0375-9601(97)00960-2

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A surfactant-mediated homoepitaxial metal system, Cu/In/Cu(111), is studied by using first-principles calculations and the kinetic Monte Carlo method. A new repulsion model is proposed for the Cu/In/Cu(111) system where surface-substitutional In atoms repel diffusing Cu adatoms and build a repulsion network. This repulsion network results in an average increase of terrace barriers for adatoms Cu and enhanced island density. The layer-by-layer growth for the Cu/In/Cu(111) system is achieved with a repulsion model in a kinetic Monte Carlo simulation. The importance of the additional barrier Delta E is confirmed in determining film morphology. (C) 1998 Elsevier Science B.V.

引用

页码：127 / 133

页数：7

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