Strontium titanate resistance modulation by ferroelectric field effect

被引：8

作者：

Marré, D

Tumino, A

Bellingeri, E

Pallecchi, I

Pellegrino, L

Siri, AS

机构：

[1] INFM, LAMIA, CNR, IMEM, I-16146 Genoa, Italy

[2] Dipartimento Fis, I-16146 Genoa, Italy

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2003年 / 36卷 / 07期

关键词：

D O I：

10.1088/0022-3727/36/7/319

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Among perovskite oxides strontium titanate (STO) SrTiO3 undergoes a metal-insulator transition at very low carrier concentration and exhibits high mobility values at low temperature. We exploited such electrical properties and the structural compatibility of perovskite oxide materials in realizing ferroelectric field effect epitaxial heterostructures. By pulsed laser deposition, we grew patterned field effect devices, consisting of lanthanum doped STO and Pb(Zr,Ti)O-3. Such devices showed a resistance modulation up to 20%, consistent with geometrical parameters and carrier concentration of the semiconducting channel.

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页码：896 / 900

页数：5

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