THz radiation emission properties of multienergy arsenic-ion-implanted GaAs and semi-insulating GaAs based photoconductive antennas

被引：62

作者：

Liu, TA

Tani, M

Pan, CL

机构：

[1] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 300, Taiwan

[2] Osaka Univ, Res Ctr Supercond Photon, Suita, Osaka 5650871, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2003年 / 93卷 / 05期

关键词：

D O I：

10.1063/1.1541105

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We compare the performance of THz photoconductive (PC) emitter antennas fabricated on multienergy arsenic ion implanted GaAs (multi-GaAs:As+) and semi-insulating GaAs. High damage threshold biasing (>60 kV/cm) and large saturation optical-pumping power (similar to20 mW) for multi-GaAs:As+ based PC antennas are reported. Carrier mobility in the As ion implanted layer of GaAs:As+ was estimated to be about 150 cm(2)/V/s, which was comparable to that of. low,temperature GaAs. (C) 2003 American Institute of Physics.

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页码：2996 / 3001

页数：6

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