Effect of rapid thermal annealing on carrier lifetimes of arsenic-ion-implanted GaAs

被引：14

作者：

Lin, GR ^{[1
]}

Chen, WC ^{[1
]}

Ganikhanov, F ^{[1
]}

Chang, CS ^{[1
]}

Pan, CL ^{[1
]}

机构：

[1] NATL CHIAO TUNG UNIV,INST ELECTROOPT ENGN,HSINCHU 30010,TAIWAN

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 07期

关键词：

D O I：

10.1063/1.117107

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Femtosecond time-resolved reflectivity measurements, structural, and electrical analyses have been performed to investigate the effect of rapid thermal annealing (RTA) on GaAs implanted with 200 keV arsenic ions at 10(16) ions/cm(2). Ultrashort carrier lifetimes from 0.48 fs to 2.3 ps were observed for samples annealed at temperatures between 600 and 800 degrees C. The time constants are somewhat shorter than those of RTA-annealed low-temperature molecular-beam epitaxy grown material, while following the same trend of longer time constants and recovery of resistance at higher annealing temperatures. Arsenic precipitates were not observed. (C) 1996 American Institute of Physics.

引用

页码：996 / 998

页数：3

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