Chemical vapor deposition of tantalum carbide and carbonitride thin films from Me3CE=Ta(CH2CMe3)3 (E = CH, N)

被引：22

作者：

Chang, YH ^{[1
]}

Wu, JB ^{[1
]}

Chang, PJ ^{[1
]}

Chiu, HT ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Dept Appl Chem, Hsinchu 30050, Taiwan

来源：

JOURNAL OF MATERIALS CHEMISTRY | 2003年 / 13卷 / 02期

关键词：

D O I：

10.1039/b208129f

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Chemical vapor deposition (CVD) of thin films employing Me3CCH=Ta(CH2CMe3)(3) and Me3CN=Ta(CH2CMe3)(3) as the precursors has been carried out. TaC and TaCN films were deposited at relatively low temperatures (623-923 K). In comparison, using Me3CN=Ta(CH2CMe3)(3), the Ta=N bond did not undergo cleavage during the reaction and the N atom was incorporated into the film as nitride. The volatile components evolved were collected and examined by GC-MS, FT-IR, H-1 and C-13 NMR spectroscopy. Possible decomposition pathways of the tantalum complexes are proposed to rationalize the observation.

引用

页码：365 / 369

页数：5

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