Three-dimensional hydrogen microscopy in diamond

被引:100
作者
Reichart, P
Datzmann, G
Hauptner, A
Hertenberger, R
Wild, C
Dollinger, G
机构
[1] Tech Univ Munich, Phys Dept E12, D-85748 Garching, Germany
[2] Univ Munich, Dept Phys, D-85748 Garching, Germany
[3] Fraunhofer Inst Appl Solid State Phys, D-79108 Freiburg, Germany
关键词
D O I
10.1126/science.1102910
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
A microprobe of protons with an energy of 17 million electron volts is used to quantitatively image three-dimensional hydrogen distributions at a lateral resolution better than 1 micrometer with high sensitivity. Hydrogen images of a <110>-textured undoped potycrystalline diamond film show that most of the hydrogen is located at grain boundaries. The average amount of hydrogen atoms along the grain boundaries is (8.1 +/- 1.5) x 10(14) per square centimeter, corresponding to about a third of a monolayer. The hydrogen content within the grain is below the experimental sensitivity of 1.4 x 10(16) atoms per cubic centimeter (0.08 atomic parts per million). The data prove a low hydrogen content within chemical vapor deposition-grown diamond and the importance of hydrogen at grain boundaries, for example, with respect to electronic properties of polycrystalline diamond.
引用
收藏
页码:1537 / 1540
页数:4
相关论文
共 33 条
[11]   3D hydrogen profiling using a proton microbeam [J].
Dujmic, D ;
Jaksic, M ;
Soic, N ;
Tadic, T ;
Bogdanovic, I .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1996, 111 (1-2) :126-132
[12]   Unified approach to the classical statistical analysis of small signals [J].
Feldman, GJ ;
Cousins, RD .
PHYSICAL REVIEW D, 1998, 57 (07) :3873-3889
[13]   HYDROGEN-INDUCED VIBRATIONAL AND ELECTRONIC-TRANSITIONS IN CHEMICAL-VAPOR-DEPOSITED DIAMOND, IDENTIFIED BY ISOTOPIC-SUBSTITUTION [J].
FUCHS, F ;
WILD, C ;
SCHWARZ, K ;
MULLERSEBERT, W ;
KOIDL, P .
APPLIED PHYSICS LETTERS, 1995, 66 (02) :177-179
[14]   Hydrogen incorporation in diamond: The nitrogen-vacancy-hydrogen complex [J].
Glover, C ;
Newton, ME ;
Martineau, P ;
Twitchen, DJ ;
Baker, JM .
PHYSICAL REVIEW LETTERS, 2003, 90 (18) :4
[15]   Temperature-dependent emptying of grain-boundary charge traps in chemical vapor deposited diamond [J].
Hearne, SM ;
Jamieson, DN ;
Trajkov, E ;
Prawer, S ;
Butler, JE .
APPLIED PHYSICS LETTERS, 2004, 84 (22) :4493-4495
[16]   High carrier mobility in single-crystal plasma-deposited diamond [J].
Isberg, J ;
Hammersberg, J ;
Johansson, E ;
Wikström, T ;
Twitchen, DJ ;
Whitehead, AJ ;
Coe, SE ;
Scarsbrook, GA .
SCIENCE, 2002, 297 (5587) :1670-1672
[17]   Hydrogen-terminated diamond surfaces and interfaces [J].
Kawarada, H .
SURFACE SCIENCE REPORTS, 1996, 26 (07) :205-259
[18]   Heteroepitaxial growth of highly oriented diamond on cubic silicon carbide [J].
Kawarada, H ;
Wild, C ;
Herres, N ;
Locher, R ;
Koidl, P ;
Nagasawa, H .
JOURNAL OF APPLIED PHYSICS, 1997, 81 (08) :3490-3493
[19]   The distribution of hydrogen in polycrystalline CVD diamond [J].
Maclear, RD ;
Butler, JE ;
Connell, SH ;
Doyle, BP ;
Machi, IZ ;
Rebuli, DB ;
Sellschop, JPF ;
Sideras-Haddad, E .
DIAMOND AND RELATED MATERIALS, 1999, 8 (8-9) :1615-1619
[20]   Origin of surface conductivity in diamond [J].
Maier, F ;
Riedel, M ;
Mantel, B ;
Ristein, J ;
Ley, L .
PHYSICAL REVIEW LETTERS, 2000, 85 (16) :3472-3475