Coherent carrier dynamics in semiconductor superlattices

被引：14

作者：

Diez, E ^{[1
]}

Gomez-Alcala, R

Dominguez-Adame, F

Sanchez, A

Berman, GP

机构：

[1] Univ Carlos III Madrid, GISC, Dept Matemat, E-28911 Madrid, Spain

[2] Univ Vigo, Dept Tecnol Comunicac, E-36200 Vigo, Spain

[3] Univ Complutense Madrid, GISC, Dept Fis Mat, E-28040 Madrid, Spain

[4] Univ Calif Los Alamos Natl Lab, Div Theoret, Los Alamos, NM 87545 USA

[5] Univ Calif Los Alamos Natl Lab, CNLS, Los Alamos, NM 87545 USA

[6] LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia

来源：

PHYSICS LETTERS A | 1998年 / 240卷 / 1-2期

关键词：

D O I：

10.1016/S0375-9601(98)00023-1

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We investigate the coherent dynamics of carriers in semiconductor superlattices driven by ac-dc electric fields. We solve numerically the time-dependent effective-mass equation for the envelope function. We find that carriers undergo Rabi oscillations when the driving frequency is close to the separation between minibands. (C) 1998 Elsevier Science B.V.

引用

页码：109 / 111

页数：3

共 7 条

[1] RABI FLOPPING IN SEMICONDUCTORS [J].

CUNDIFF, ST ;

KNORR, A ;

FELDMANN, J ;

KOCH, SW ;

GOBEL, EO ;

NICKEL, H .

PHYSICAL REVIEW LETTERS, 1994, 73 (08) :1178-1181

[2] Electron dynamics in intentionally disordered semiconductor superlattices [J].

Diez, E ;

Sanchez, A ;

DominguezAdame, F ;

Berman, GP .

PHYSICAL REVIEW B, 1996, 54 (20) :14550-14559

[3] SWITCHING NANO-DEVICE BASED ON RABI OSCILLATIONS [J].

MARTIN, T ;

BERMAN, G .

PHYSICS LETTERS A, 1994, 196 (1-2) :65-69

[4] FINITE-ELEMENT ANALYSIS OF QUANTUM WELLS OF ARBITRARY SEMICONDUCTORS WITH ARBITRARY POTENTIAL PROFILES [J].

NAKAMURA, K ;

SHIMIZU, A ;

KOSHIBA, M ;

HAYATA, K .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1989, 25 (05) :889-895

[5] FREQUENCY-DEPENDENCE OF H/E CONDUCTANCE OSCILLATIONS IN MESOSCOPIC AG RINGS [J].

PIEPER, JB ;

PRICE, JC .

PHYSICAL REVIEW LETTERS, 1994, 72 (22) :3586-3589

[6]

STTAFORD CA, 1996, PHYS REV LETT, V76, P1916

[7] Rabi oscillations between Bloch bands [J].

Zhao, XG ;

Georgakis, GA ;

Niu, Q .

PHYSICAL REVIEW B, 1996, 54 (08) :R5235-R5238

← 1 →