Formation of atom wires on vicinal silicon -: art. no. 126106

被引：37

作者：

González, C

Snijders, PC

Ortega, J

Pérez, R

Flores, F

Rogge, S

Weitering, HH

机构：

[1] Univ Autonoma Madrid, Fac Ciencias, Dept Fis Teor Mat Condensada, Madrid 28049, Spain

[2] Delft Univ Technol, Kavli Inst Nanosci, NL-2628 CJ Delft, Netherlands

[3] Univ Tennessee, Dept Phys & Astron, Knoxville, TN 37996 USA

[4] Oak Ridge Natl Lab, Condensed Matter Sci Div, Oak Ridge, TN 37831 USA

来源：

PHYSICAL REVIEW LETTERS | 2004年 / 93卷 / 12期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1103/PhysRevLett.93.126106

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The feasibility of creating atomic wires on vicinal silicon surfaces via pseudomorphic step-edge decoration has been analyzed for the case of Ga on Si(112). Scanning tunneling microscopy and density functional theory calculations indicate the formation of Ga zigzag chains intersected by quasiperiodic vacancy lines or "misfit dislocations." This structure strikes a balance between the system's drive towards chemical passivation and its need for strain relaxation in the atom chains. Spatially fluctuating disorder, intrinsic to the reconstruction, originates from the two symmetry-degenerate orientations of the zigzag chains on vicinal Si.

引用

收藏

页码：126106 / 1

页数：4

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