Buried InAlGaAs-InP waveguides: Etching, overgrowth, and characterization

被引：7

作者：

Kollakowski, S ^{[1
]}

Lemm, C ^{[1
]}

Strittmatter, A ^{[1
]}

Bottcher, EH ^{[1
]}

Bimberg, D ^{[1
]}

机构：

[1] Tech Univ Berlin, Inst Festkorperphys 1, D-10623 Berlin, Germany

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1998年 / 10卷 / 01期

关键词：

electrochemical processes; etching; InP; InAlGaAs; semiconductor waveguides;

D O I：

10.1109/68.651128

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on the fabrication and characterization of InP-buried InAlGaAs rectangular core waveguides. LP-MOCVD is used for growth of the InAlGaAs-InP material system and the regrowth of InP. Reactive ion-etching is employed for achieving smooth and precise etch profiles. An efficient procedure for preparing the surface is described that results in homogeneous epitaxial InP overgrowth by preventing re-oxidation of the air-exposed etched surface. The-loss characteristics of waveguides with a core layer thickness of 450 nm and widths ranging from 3.5 to 6 mu m are investigated at 1.3-mu m wavelength. The propagation loss is found to increase from 3 to 10 dB/cm with decreasing core width. Scattering loss caused by residual sidewall roughness is found to be the dominant loss mechanism.

引用

页码：114 / 116

页数：3

共 12 条

[1] LOW-LOSS III-V SEMICONDUCTOR OPTICAL WAVE-GUIDES [J].

DERI, RJ ;

KAPON, E .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1991, 27 (03) :626-640

[2] Improvement of AlGaAs/AlGaAs interface by in situ low-temperature H-2 annealing in metalorganic vapor phase epitaxial regrowth [J].

Gotoh, S ;

Horikawa, H .

APPLIED PHYSICS LETTERS, 1996, 69 (05) :641-643

[3]

HASNAIN G, 1994, P 6 INT C INP REL MA

[4] DRY-ETCHING OF III/V-SEMICONDUCTORS - FINE-TUNING OF PATTERN TRANSFER AND PROCESS-CONTROL [J].

KAINDL, J ;

SOTIER, S ;

FRANZ, G .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1995, 142 (07) :2418-2424

[5] Waveguide-integrated InP-InGaAs-InAlGaAs MSM photodetector with very-high vertical-coupling efficiency [J].

Kollakowski, S ;

Bottcher, EH ;

Lemm, C ;

Strittmatter, A ;

Bimberg, D ;

Krautle, H .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1997, 9 (04) :496-498

[6] LOW-TEMPERATURE MBE-GROWN IN0.52GA0.18AL0.30AS/INP OPTICAL WAVE-GUIDES [J].

KUNZEL, H ;

GROTE, N ;

ALBRECHT, P ;

BOTTCHER, J ;

BORNHOLDT, C .

ELECTRONICS LETTERS, 1992, 28 (09) :844-846

[7]

LANTRATOV VM, 1996, P 23 INT C PHYS SEM, P1095

[8] Reactive ion etching of InP/InAlGaAs/InGaAs heterostructures [J].

Lemm, C ;

Kollakowski, S ;

Bimberg, D ;

Janiak, K .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1997, 144 (09) :L255-L257

[9] IMPROVED PERFORMANCE OF LARGE-AREA INP/INGAAS METAL-SEMICONDUCTOR-METAL PHOTODETECTORS BY SULFUR PASSIVATION [J].

SCHADE, U ;

KOLLAKOWSKI, S ;

BOTTCHER, EH ;

BIMBERG, D .

APPLIED PHYSICS LETTERS, 1994, 64 (11) :1389-1391

[10]

SCHRAMM JE, 1994, P 6 INT C INP REL MA, P383

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