Waveguide-integrated InP-InGaAs-InAlGaAs MSM photodetector with very-high vertical-coupling efficiency

被引：8

作者：

Kollakowski, S ^{[1
]}

Bottcher, EH ^{[1
]}

Lemm, C ^{[1
]}

Strittmatter, A ^{[1
]}

Bimberg, D ^{[1
]}

Krautle, H ^{[1
]}

机构：

[1] DEUTSCH TELEKOM AG,FTZ,INTEGRIERTE OPTOELEKTRON,D-64295 DARMSTADT,GERMANY

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1997年 / 9卷 / 04期

关键词：

high-speed devices; InP; InGaAs; InAlGaAs; MSM devices; photodetectors; semiconductor waveguides;

D O I：

10.1109/68.559400

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on a novel implementation of long-wavelength vertically-coupled waveguide-integrated metal-semiconductor-metal (MSM) InGaAs photodetectors which results in a significantly improved guide-to-absorber coupling efficiency. By employing an In0.53Al0.3Ga0.16As buried strip waveguide embedded in InP, a coupling length of only 20 mu m is sufficient to obtain an internal quantum efficiency greater than 95%. Moreover, the photoresponse is found to be virtually independent of the polarization state of Light coupled into the input waveguide, The device parameters agree with the results of eigenmode calculations.

引用

页码：496 / 498

页数：3

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