10 GHz 1.9 ps actively modelocked fibre integrated ring laser at 1.3μm

被引：27

作者：

Guy, MJ

Taylor, JR

Wakita, K

机构：

[1] Univ London Imperial Coll Sci Technol & Med, Dept Phys, Femtosecond Opt Grp, London SW7 2BZ, England

[2] NTT Corp, Optoelect Labs, Kanagawa 24301, Japan

来源：

ELECTRONICS LETTERS | 1997年 / 33卷 / 19期

关键词：

optical fibre communication; semiconductor lasers; electro-absorption modulators; high-speed optical techniques;

D O I：

10.1049/el:19971101

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors report a novel 1.3 mu m actively modelocked semiconductor ring laser which generates near transform-limited pulses as short as 1.9ps at a repetition rate of 10GHz. The laser is constructed from discrete fibre pigtailed components and an electroabsorption modulator is used as the modelocking element.

引用

收藏

页码：1630 / 1632

页数：3

相关论文

共 13 条

[1] PASSIVE MODELOCKING OF 1,3 MU-M SEMICONDUCTOR-LASER AMPLIFIER IN LOOP MIRROR CONFIGURATION [J].

AMMANN, H ;

HODEL, W ;

WEBER, HP ;

HOLTMANN, C ;

MELCHIOR, H .

ELECTRONICS LETTERS, 1995, 31 (15) :1257-1258

[2]

CHERNIKOV SV, 1997, P OPT FIBR COMM C

[3] Lossless InAsP-InGaP modulator at 1.3 mu m for optical conversion of radio signals up to 40 GHz [J].

Devaux, F ;

Ougazzaden, A ;

Huet, F ;

Carre, M .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1997, 9 (07) :931-933

[4] 10GHz 3ps actively mode-locked ring laser incorporating a semiconductor laser amplifier and an electroabsorption modulator [J].

Guy, MJ ;

Taylor, JR ;

Moodie, DG ;

Kelly, AE .

ELECTRONICS LETTERS, 1996, 32 (24) :2240-2241

[5]

IDO T, 1997, P OPT FIBR COMM C

[6] OPTICAL SOLITON PROPAGATION USING 3 GHZ GAIN-SWITCHED 1.3-MU-M LASER-DIODES [J].

IWATSUKI, K ;

TAKADA, A ;

SARUWATARI, M .

ELECTRONICS LETTERS, 1988, 24 (25) :1572-1574

[7] FM AND AM MODE LOCKING OF HOMOGENEOUS LASER .1. THEORY [J].

KUIZENGA, DJ ;

SIEGMAN, AE .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1970, QE 6 (11) :694-+

[8] GAIN-SWITCHED PICOSECOND PULSE (LESS-THAN 10 PS) GENERATION FROM 1.3 MU-M INGAASP LASER-DIODES [J].

LIU, HF ;

FUKAZAWA, M ;

KAWAI, Y ;

KAMIYA, T .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1989, 25 (06) :1417-1425

[9] Discrete electroabsorption modulators with enhanced modulation depth [J].

Moodie, DG ;

Harlow, MJ ;

Guy, MJ ;

Perrin, SD ;

Ford, CW ;

Robertson, MJ .

JOURNAL OF LIGHTWAVE TECHNOLOGY, 1996, 14 (09) :2035-2043

[10] ACTIVE MODE-LOCKING OF 1.3-MU-M EXTENDED-CAVITY SILICON CHIP BRAGG REFLECTOR LASER [J].

RAYBON, G ;

TUCKER, RS ;

EISENSTEIN, G .

ELECTRONICS LETTERS, 1988, 24 (25) :1563-1565