Lossless InAsP-InGaP modulator at 1.3 mu m for optical conversion of radio signals up to 40 GHz

被引：7

作者：

Devaux, F

Ougazzaden, A

Huet, F

Carre, M

机构：

[1] FRANCE TELECOM, CNET/PAB, 92225 Bagneux Cedex

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1997年 / 9卷 / 07期

关键词：

electrooptics materials/devices; integrated optoelectronics; millimeter-wave radio communications; semiconductor device measurements; semiconductor optical amplifier;

D O I：

10.1109/68.593354

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on an InAsP-InGaP electroabsorption modulator at 1.3 mu cm integrated with a semiconductor amplifier. The fiber-to-fiber insertion gain reaches +10 dB, The 50-mu m-long modulator section exhibits a bandwidth of 36 GHz and a -17-dB extinction ratio with 3-V drive voltage. The integrated amplifier produced an RF-link efficiency of -26 dB at 20 GHz without any external amplification.

引用

页码：931 / 933

页数：3

共 6 条

[1]

CADIOU JF, 1994, P IEEE MTT S TOP M O

[2] ELECTROABSORPTION IN LATTICE-MATCHED INGAALAS-INALAS QUANTUM-WELLS AT 1.3-MU-M [J].