Effect of surface steps on the microstructure of lateral composition modulation

被引：13

作者：

Follstaedt, DM

Reno, JL

Jones, ED

Lee, SR

Norman, AG

Moutinho, HR

Mascarenhas, A

Twesten, RD

机构：

[1] Sandia Natl Labs, Albuquerque, NM 87185 USA

[2] Natl Renewable Energy Lab, Golden, CO 80401 USA

[3] Univ Illinois, Urbana, IL 61801 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 05期

关键词：

D O I：

10.1063/1.127080

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Growth of InAs/AlAs short-period superlattices on appropriately miscut (001) InP substrates is shown to alter the microstructure of composition modulation from a two-dimensional organization of short compositionally enriched wires to a single dominant modulation direction with wire lengths up to similar to 1 mu m. The effects of miscut are interpreted in terms of surface step orientation and character. The material is strongly modulated and exhibits intense optical emission. The one-dimensional modulations appear potentially useful for new devices that take advantage of the preferred direction formed in the growth plane. (C) 2000 American Institute of Physics. [S0003-6951(00)04831-2].

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页码：669 / 671

页数：3

相关论文

共 18 条

[1] Laterally modulated composition profiles in AlAs/InAs short-period superlattices [J].

Ahrenkiel, SP ;

Norman, AG ;

Al-Jassim, MM ;

Mascarenhas, A ;

Mirecki-Millunchick, J ;

Twesten, RD ;

Lee, SR ;

Follstaedt, DM ;

Jones, ED .

JOURNAL OF APPLIED PHYSICS, 1998, 84 (11) :6088-6094

[2] EFFECT OF SUBSTRATE MISORIENTATION ON THE GROWTH OF GAXIN1-XP LATERAL QUANTUM-WELLS [J].

CHEN, AC ;

MOY, AM ;

CHOU, LJ ;

HSIEH, KC ;

CHENG, KY .

APPLIED PHYSICS LETTERS, 1995, 66 (20) :2694-2696

[3] FORMATION OF LATERAL QUANTUM-WELLS IN VERTICAL SHORT-PERIOD SUPERLATTICES BY STRAIN-INDUCED LATERAL-LAYER ORDERING PROCESS [J].

CHENG, KY ;

HSIEH, KC ;

BAILLARGEON, JN .

APPLIED PHYSICS LETTERS, 1992, 60 (23) :2892-2894

[4] GAXIN1-XAS MULTIPLE-QUANTUM-WIRE LASERS GROWN BY THE STRAIN-INDUCED LATERAL-LAYER ORDERING PROCESS [J].

CHOU, ST ;

CHENG, KY ;

CHOU, LJ ;

HSIEH, KC .

APPLIED PHYSICS LETTERS, 1995, 66 (17) :2220-2222

[5] Growth of InAs quantum dots on vicinal GaAs(001) surfaces misoriented in the [010] direction [J].

Evtikhiev, VP ;

Tokranov, VE ;

Kryzhanovskii, AK ;

Boiko, AM ;

Suris, RA ;

Titkov, AN ;

Nakamura, A ;

Ichida, M .

SEMICONDUCTORS, 1998, 32 (07) :765-769

[6]

Hsieh KC, 1995, MATER RES SOC SYMP P, V379, P145, DOI 10.1557/PROC-379-145

[7] COMPOSITIONAL MODULATION AND LONG-RANGE ORDERING IN GAP INP SHORT-PERIOD SUPERLATTICES GROWN BY GAS SOURCE MOLECULAR-BEAM EPITAXY [J].

HSIEH, KC ;

BAILLARGEON, JN ;

CHENG, KY .

APPLIED PHYSICS LETTERS, 1990, 57 (21) :2244-2246

[8] Kinetic instability of semiconductor alloy growth [J].

Ipatova, IP ;

Malyshkin, VG ;

Maradudin, AA ;

Shchukin, VA ;

Wallis, RF .

PHYSICAL REVIEW B, 1998, 57 (20) :12968-12993

[9] Photoluminescence studies of lateral composition modulated short-period AlAs/InAs superlattices [J].

Jones, ED ;

Follstaedt, DM ;

Lee, SR ;

Reno, JL ;

Millunchick, JM ;

Ahrenkiel, SP ;

Mascarenhas, A ;

Norman, AG ;

Zhang, Y ;

Twesten, RD .

THIN SOLID FILMS, 1999, 357 (01) :31-34

[10] Reciprocal-space analysis of compositional modulation in short-period superlattices using position-sensitive x-ray detection [J].

Lee, SR ;

Millunchick, JM ;

Twesten, RD ;

Follstaedt, DM ;

Reno, JL ;

Ahrenkiel, SP ;

Norman, AG .

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 1999, 10 (03) :191-197