Photoluminescence studies of lateral composition modulated short-period AlAs/InAs superlattices

被引：4

作者：

Jones, ED

Follstaedt, DM

Lee, SR

Reno, JL

Millunchick, JM

Ahrenkiel, SP

Mascarenhas, A

Norman, AG

Zhang, Y

Twesten, RD

机构：

[1] Sandia Natl Labs, Phys & Chem Sci Ctr, Albuquerque, NM 87185 USA

[2] Univ Michigan, Dept Mat Sci & Engn, Ann Arbor, MI 48109 USA

[3] Natl Renewable Energy Lab, Golden, CO 80401 USA

[4] Univ Illinois, Ctr Microanal, Urbana, IL 61801 USA

来源：

THIN SOLID FILMS | 1999年 / 357卷 / 01期

关键词：

photoluminescence studies; AlAs/InAs superlattices; spontaneous lateral composition modulation;

D O I：

10.1016/S0040-6090(99)00470-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present low temperature photoluminescence data for a series of layers exhibiting spontaneous lateral composition modulation in (AlAs)(m) (InAs)(n) short period superlattices grown on InP with differing average lattice constants, i.e. varying global strain, The low temperature photoluminescence peak energies were found to be much lower than the corresponding energy expected for the equivalent InxAl1-xAs alloys. The bandgap energy reductions are found to approach 500 meV and this reduction is found to correlated with the 'strength' of the composition modulation wave amplitude. (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：31 / 34

页数：4

共 15 条

[1] Laterally modulated composition profiles in AlAs/InAs short-period superlattices [J].