Structural and ferroelectric studies of Bi3.44La0.56Ti3O12 films

被引：77

作者：

Tomar, MS ^{[1
]}

Melgarejo, RE

Hidalgo, A

Mazumder, SB

Katiyar, RS

机构：

[1] Univ Puerto Rico, Dept Phys, Mayaguez, PR 00681 USA

[2] Univ Puerto Rico, Dept Phys, San Juan, PR 00931 USA

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 02期

关键词：

D O I：

10.1063/1.1592308

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Bi4-xLaxTi3O12 materials were synthesized by the sol-gel process and thin films were prepared on Pt (i.e., Pt/TiO2/SiO2/Si) substrate by spin coating. Structural properties of the films were examined by x-ray diffraction and Raman spectroscopy. Dielectric and ferroelectric response was studied for 0.63-mum-thick Bi3.44La0.56Ti3O12 films. Butterfly dielectric behavior and remnant polarization of up to P-r=41 muC/cm(2) has been achieved. These films also showed fatigue free response up to 10(9) switching cycles. On the basis of these studies, large polarization in Bi3.44La0.56Ti3O12 films is attributed to dipole formation which may tilt TiO6 octahedra to Bi2O2 interlayer. (C) 2003 American Institute of Physics.

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页码：341 / 343

页数：3

相关论文

共 12 条

[1] BISMUTH TITANATE SOLID-SOLUTIONS [J].

ARMSTRONG, RA ;

NEWNHAM, RE .

MATERIALS RESEARCH BULLETIN, 1972, 7 (10) :1025-+

[2]

AURIVILLIUS B, 1949, ARK KEMI, V0001

[3] Layered perovskites with giant spontaneous polarizations for nonvolatile memories [J].

Chon, U ;

Jang, HM ;

Kim, MG ;

Chang, CH .

PHYSICAL REVIEW LETTERS, 2002, 89 (08) :1-087601

[4] Large remanent polarization of (Bi,Nd)4Ti3O12 epitaxial thin films grown by metalorganic chemical vapor deposition [J].

Kojima, T ;

Sakai, T ;

Watanabe, T ;

Funakubo, H ;

Saito, K ;

Osada, M .

APPLIED PHYSICS LETTERS, 2002, 80 (15) :2746-2748

[5] Ferroelectric Bi3.25La0.75Ti3O12 films of uniform a-axis orientation on silicon substrates [J].

Lee, HN ;

Hesse, D ;

Zakharov, N ;

Gösele, U .

SCIENCE, 2002, 296 (5575) :2006-2009

[6] Anisotropic ferroelectric properties of epitaxially twinned Bi3.25La0.75Ti3O12 thin films grown with three different orientations [J].

Lee, HN ;

Hesse, D .

APPLIED PHYSICS LETTERS, 2002, 80 (06) :1040-1042

[7] Large ferroelectric response in Bi4-xNdxTi3O12 films prepared by sol-gel process [J].

Melgarejo, RE ;

Tomar, MS ;

Bhaskar, S ;

Dobal, PS ;

Katiyar, RS .

APPLIED PHYSICS LETTERS, 2002, 81 (14) :2611-2613

[8] Lanthanum-substituted bismuth titanate for use in non-volatile memories [J].

Park, BH ;

Kang, BS ;

Bu, SD ;

Noh, TW ;

Lee, J ;

Jo, W .

NATURE, 1999, 401 (6754) :682-684

[9] Crystal and electronic structures of Bi4-xLaxTi3O12 ferroelectric materials [J].

Shimakawa, Y ;

Kubo, Y ;

Tauchi, Y ;

Asano, H ;

Kamiyama, T ;

Izumi, F ;

Hiroi, Z .

APPLIED PHYSICS LETTERS, 2001, 79 (17) :2791-2793

[10] Approach for enhanced polarization of polycrystalline bismuth titanate films by Nd3+/V5+ cosubstitution [J].

Uchida, H ;

Yoshikawa, H ;

Okada, I ;

Matsuda, H ;

Iijima, T ;

Watanabe, T ;

Kojima, T ;

Funakubo, H .

APPLIED PHYSICS LETTERS, 2002, 81 (12) :2229-2231