AlGaN-based 280 nm light-emitting diodes with continuous-wave power exceeding 1 mW at 25 mA

被引：102

作者：

Zhang, JP

Hu, X

Bilenko, Y

Deng, J

Lunev, A

Shur, MS

Gaska, R

Shatalov, M

Yang, JW

Khan, MA

机构：

[1] Sensor Elect Technol Inc, Columbia, SC 29209 USA

[2] Univ S Carolina, Dept Elect Engn, Columbia, SC 29208 USA

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 23期

关键词：

D O I：

10.1063/1.1831557

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Optimization of the migration-enhanced metalorganic chemical vapor deposition and further optimization of the contact and active layer design for 280 nm light-emitting diodes resulted in large improvement of cw and pulsed output power and in a superior spectrum purity. The ratio of the main peak to the background luminescence determined by the detection system is higher than 2000:1 at 20 mA dc. The on-wafer cw power was measured to be 255 muW at 20 mA dc. The power popped up exceeding 1 mW for a packaged device under 25 mA dc and 9 mW under pulse 200 mA. The maximum wall-plug-efficiency of 0.67% was obtained for the packaged device at 25 mA dc. (C) 2004 American Institute of Physics.

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页码：5532 / 5534

页数：3

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